Patent · US Expired

Method of fabricating copper interconnects with very low-k inter-level insulator

US6686273B2 · kind B2 · utility

16Cited by
3References
19Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 26, 2001
Grant dateFeb 3, 2004
Priority date—
Expiry dateSep 26, 2021

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/76801
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A method of forming a low-k inter-level insulator structure is provided comprising the steps of: providing a first metal layer; depositing a sacrificial insulator layer overlying the first metal layer; producing a second metal layer; removing the sacrificial insulator layer; and depositing a low-k inter-level insulator, whereby low-k material replaces the sacrificial insulator. An intermediate insulator layer structure is also provided comprising a sacrificial insulator layer overlying a low-k insulator layer, such that the sacrificial insulator layer may be subjected to processes, including CMP, which may be incompatible with low-k insulator materials.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.