Thyristor-based device adapted to inhibit parasitic current
US6686612B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 1, 2002 |
| Grant date | Feb 3, 2004 |
| Priority date | — |
| Expiry date | Oct 1, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/811
Abstract
Parasitic current leakage from a thyristor-based semiconductor device is inhibited. According to an example embodiment of the present invention, a thyristor-based semiconductor device includes a thyristor body portion and a control port located in a substrate, the control port being adapted for capacitively coupling to the thyristor body portion for controlling current flow therein. The substrate further includes a doped circuit region separated by a channel region from another doped region of similar polarity in the substrate. The control port faces the channel region in the substrate, and the channel region is susceptible to current leakage in response to voltage pulses being applied to the control port for controlling current flow in the thyristor. The device is arranged such that such current leakage in the channel is inhibited while pulses are applied to the control port for controlling current flow in the thyristor; the parasitic current leakage between the doped circuit region and the doped region in the substrate is inhibited.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.