Programming a phase-change material memory
US6687153B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Apr 1, 2003 |
| Grant date | Feb 3, 2004 |
| Priority date | — |
| Expiry date | Apr 1, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2013/0092
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The memory device has constituent cells which include a structural phase-change material to store the cells data. This material may be, for instance, a chalcogenide alloy. A first pulse is applied to the cell to leave the material in a first state, such as a reset state in which the material is relatively amorphous and has relatively high resistivity. Thereafter, a second pulse is applied to the cell to change the material from the first state to a second, different state, such as a set state in which the material is relatively crystalline and has relatively low resistivity. This second pulse has a generally triangular shape, rather than a rectangular one.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.