Plasma method for fabricating oxide thin films
US6689646B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 14, 2002 |
| Grant date | Feb 10, 2004 |
| Priority date | — |
| Expiry date | Nov 14, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6758
Abstract
A method is provided for fabricating a thin film oxide. The method include forming a first silicon layer, applying a second silicon layer overlying the first silicon layer, oxidizing the second silicon layer at a temperature of less than 400° C. using an inductively coupled plasma source, and forming a thin film oxide layer overlying the first silicon layer. In some cases, the thin film oxide layer overlies the oxidized second silicon layer and is formed by a high-density plasma enhanced chemical vapor deposition process and an inductively coupled plasma source at a temperature of less than 400° C. In some cases, the thin film oxide layer and the first silicon layer are incorporated into a thin film transistor and the thin film oxide layer has a fixed oxide charge density of 3×1011 per square centimeter.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.