Method for making a semiconductor device having a high-k gate dielectric
US6689675B1 · kind B1 · utility
50Cited by
8References
3Claims
0Family size
Assignee
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Key dates
| Filing date | Oct 31, 2002 |
| Grant date | Feb 10, 2004 |
| Priority date | — |
| Expiry date | Oct 31, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for making a semiconductor device is described. That method comprises forming a high-k gate dielectric layer on a substrate, oxidizing the surface of the high-k gate dielectric layer, and then forming a gate electrode on the oxidized high-k gate dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.