Semiconductor device and method of formation
US6689680B2 · kind B2 · utility
22Cited by
6References
7Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 14, 2001 |
| Grant date | Feb 10, 2004 |
| Priority date | — |
| Expiry date | Jul 14, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/014
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In accordance with one embodiment of the present invention, a semiconductor device underbump metallurgy (414) is formed over a semiconductor bond pad (128), wherein the underbump metallurgy (414) comprises a chromium, copper, and nickel phased-region (404), and wherein the presence of nickel in the phased-region (404) inhibits conversion of tin from the solder bump and other tin sources from forming spallable Cu6Sn5 copper-tin intermetallics.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.