Composition for oxide CMP
US6689692B1 · kind B1 · utility
19Cited by
26References
29Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 19, 1997 |
| Grant date | Feb 10, 2004 |
| Priority date | — |
| Expiry date | Dec 19, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31053
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A chemical mechanical polishing composition comprising a soluble cerium compound at a pH above 3 and a method to selectively polish a silicon oxide overfill in preference to a silicon nitride film layer in a single step during the manufacture of integrated circuits and semiconductors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.