Method for manufacturing a semiconductor device using recirculation of a process gas
US6689699B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 19, 2001 |
| Grant date | Feb 10, 2004 |
| Priority date | — |
| Expiry date | Oct 18, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/909
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
There is disclosed a semiconductor processing apparatus comprising a process chamber treating a substrate, a process gas feeder feeding a process gas to the process chamber, a first vacuum pump exhausting the process chamber, a second vacuum pump inhaling gas on an exhaust side of the first vacuum pump, and a circulation path circulating at least a part of the process gas exhausted from the process chamber via the first vacuum pump into the process chamber, wherein the circulation path is provided with a dust trapping mechanism, the dust trapping mechanism being capable of substantially maintaining a conductance of the circulation path before and after the capture of dust.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.