Method for making a device comprising layers of planes of quantum dots
US6690027B1 · kind B1 · utility
4Cited by
4References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 13, 2002 |
| Grant date | Feb 10, 2004 |
| Priority date | — |
| Expiry date | Jun 13, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/814
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method for forming on a Ge or Si monocrystalline substrate successive Si/Ge, Si/SiGe, or Si/SiGe/Ge layers for a Ge substrate and inversely for a Si substrate is described. Electrochemical treatment of the stack of layers to make the layers porous and form therein residual crystallites is also described. The invention may be used to provide devices having layers of planes of quantum drops.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.