High-pressure drying apparatus, high-pressure drying method and substrate processing apparatus
US6691430B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 4, 2003 |
| Grant date | Feb 17, 2004 |
| Priority date | — |
| Expiry date | Mar 4, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S134/902
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Liquid for prevention of substrate drying is supplied into a processing chamber so that a pool of the liquid is created as an anti-drying atmosphere in advance inside a processing chamber, and substrates, as they are dipped in the pool, are kept on stand-by in a substrate board. In this manner, air drying of the substrates which are kept on stand-by is prevented. When the number of the substrates in the substrate board reaches a certain number, the anti-drying atmosphere is removed from the processing chamber, which is followed by introduction of an SCF into the processing chamber and supercritical drying (high pressure drying) of all of the plurality of substrates inside the processing chamber, namely, batch supercritical drying.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.