Onium salts, photoacid generators, resist compositions, and patterning process
US6692893B2 · kind B2 · utility
17Cited by
7References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 23, 2001 |
| Grant date | Feb 17, 2004 |
| Priority date | — |
| Expiry date | Jun 27, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/126
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Onium salts of arylsulfonyloxynaphthalenesulfonate anions with iodonium or sulfonium cations are novel. A chemically amplified resist composition comprising the onium salt as a photoacid generator is suited for microfabrication, especially by deep UV lithography because of many advantages including improved resolution, improved focal latitude, minimized line width variation or shape degradation even on long-term PED, minimized debris after coating, development and peeling, and improved pattern profile after development.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.