Semiconductor device and its manufacture
US6693002B2 · kind B2 · utility
12Cited by
3References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 12, 2002 |
| Grant date | Feb 17, 2004 |
| Priority date | — |
| Expiry date | Sep 12, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/315
Abstract
A semiconductor device having: a substrate having a first area and a second area surrounding the first area; an insulating film formed in the second area; electrodes formed above the surface of the substrate in the first area; dielectric films formed above the electrodes; and an opposing electrode formed above the dielectric films, wherein the shape of a side wall of the insulating film includes a shape reflecting the outer peripheral shape of a side wall of the electrode facing the side wall of the insulating film. The semiconductor device of high integration, low cost and high reliability can be realized.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.