Structure of a light emitting diode and method of making the same
US6693306B2 · kind B2 · utility
16Cited by
1References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 22, 2002 |
| Grant date | Feb 17, 2004 |
| Priority date | — |
| Expiry date | Jul 22, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/819
Abstract
A structure of a light emitting diode (LED) and a method of making the same are disclosed. The present invention is suitable for the light emitting diode having the area that is larger than 100 mil2 and having the insulating substrate, and is featured in that the P electrode and the N electrode are mutually intercrossed. With the use of the present invention, the light emitted by each individual unit chip is more even; the operating voltage of the device is reduced; the cut size of the device can be enlarged arbitrarily according to the size of the unit chip; and the light emitting efficiency is increased.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.