Power SiC devices having raised guard rings

US6693308B2 · kind B2 · utility

Assignee

• SEMISOUTH LABORATORIES, INC. · US

Inventors

• Igor Sankin · Starkville, US
• Janna B. Dufrene · Starkville, US

Key dates

• Filing date: Feb 22, 2002
• Grant date: Feb 17, 2004
• Expiry date: Feb 22, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/111

Abstract

Silicon carbide semiconductor power devices having epitaxially grown guard rings edge termination structure are provided. Forming the claimed guard rings from an epitaxially grown SiC layer avoids the traditional problems associated with implantation of guard rings, and permits the use of self aligning manufacturing techniques for making the silicon carbide semiconductor power devices.