Semiconductor construction with buried island region and contact region

US6693322B2 · kind B2 · utility

Assignee

• Siced Electronics Development GmbH & Co. KG · DE

Inventors

• Peter Friedrichs · Koblenzer Straße, DE
• Heinz Mitlehner · Uttenreuth, DE
• Reinhold Schorner · Großenseebach, DE

Key dates

• Filing date: Jan 27, 2003
• Grant date: Feb 17, 2004
• Expiry date: Jan 27, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8325

Abstract

A semiconductor configuration for current control has an n-type first semiconductor region with a first surface, a p-type covered island region, within the first semiconductor region, with a second surface, an n-type contact region arranged on the second surface within the island region and a lateral channel region, formed between the first and second surface as part of the first semiconductor region. The channel is part of a current path from or to the contact region. The current within the lateral channel region may be influenced by at least one depletion zone. A lateral edge of the lateral channel region extends as far as the contact region.