Semiconductor photodetection device

US6693337B2 · kind B2 · utility

Assignee

• Fujitsu Quantum Devices Limited · JP

Inventors

• Yoshihiro Yoneda · Hiratsuka, JP
• Ikuo Hanawa · Yamanashi, JP

Key dates

• Filing date: Dec 17, 2001
• Grant date: Feb 17, 2004
• Expiry date: Mar 8, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F77/413

Abstract

A semiconductor photodetection device includes a semiconductor structure including an optical absorption layer having a photo-incidence surface on a first side thereof, a dielectric reflecting layer formed on a second side of the semiconductor structure opposite to the first side, a contact electrode surrounding the dielectric reflecting layer and contacting with the semiconductor structure, and a close contact electrode covering the dielectric reflecting layer and contacting with the contact electrode and the dielectric reflecting layer, wherein the close contact electrode adheres to the dielectric reflecting layer more strongly than to the contact electrode.