Circuit and method of writing a toggle memory
US6693824B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 28, 2002 |
| Grant date | Feb 17, 2004 |
| Priority date | — |
| Expiry date | Jun 28, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2207/2263
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetoresistive random access memory is operated in a toggle fashion so that its logic state is flipped from its current state to the alternate state when written. This provides for a more consistent and reliable programming because the magnetic transitional energy states during the toggle operation are stable. In a write situation, however, this does mean that the state of the cell must be read and compared to the desired state of the cell before the cell is flipped. If the cell is already in the desired logic state, then it should not be written. This read time penalty before writing is reduced by beginning the write process while reading and then aborting the write step if the cell is already in the desired state. The write can actually begin on the cell and be aborted without adversely effecting the state of the cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.