Method for forming a diffusion region

US6696335B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Dietrich Bonart · Bad Abbach, DE
• Peter Voigt · Hallbergmoos, DE

Key dates

• Filing date: Jul 31, 2002
• Grant date: Feb 24, 2004
• Expiry date: Jul 31, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B12/37
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

For particularly simple and targeted formations of a diffusion region, an interfacial region of a semiconductor substrate is subjected to a thermal transformation process and thereby carry out the thermally activated diffusion of a dopant in a substantially directed form, in particular in substantially a preferential direction, by interaction of a provided dopant with a transforming interfacial region.