STI leakage reduction
US6696349B2 · kind B2 · utility
6Cited by
10References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 13, 2001 |
| Grant date | Feb 24, 2004 |
| Priority date | — |
| Expiry date | Dec 20, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/763
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device is provided having at least two neighboring transistors and an STI region therebetween. The STI region is provided with a voltage bias to minimize subthreshold leakage current between the neighboring transistors. A method of fabricating such a semiconductor device is also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.