Method to selectively increase the top resistance of the lower programming electrode in a phase-change memory
US6696355B2 · kind B2 · utility
178Cited by
14References
19Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 14, 2000 |
| Grant date | Feb 24, 2004 |
| Priority date | — |
| Expiry date | May 13, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/52
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a process of forming a phase-change memory. A lower electrode is disposed in a first dielectric film. The lower electrode comprises an upper section and a lower section. The upper section extends beyond the first dielectric film. Resistivity in the upper section is higher than in the lower section. A second dielectric film is disposed over the first dielectric film and has an upper surface that is coplanar with the upper section at an upper surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.