Method for manufacturing semiconductor integrated circuit devices using a conductive layer to prevent peeling between a bonding pad and an underlying insulating film
US6696357B2 · kind B2 · utility
9Cited by
6References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 16, 2002 |
| Grant date | Feb 24, 2004 |
| Priority date | — |
| Expiry date | Jul 16, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/14
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Peeling between a bonding pad and an insulating film which underlies the bonding pad is to be prevented. A laminate film constituted mainly by W which is higher in mechanical strength than a wiring layer using an Al alloy film as a main conductive layer and than a bonding pad, is formed within an aperture formed in silicon oxide films and is interposed between the wiring line and the bonding pad.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.