Patent assignee · JP · COMPANY

Renesas Technology Corporation

3,937Patents
1,047Active
3,937Granted
51Portfolio score

Filing activity: Oct 7, 1996 → Feb 16, 2015 · 1,046 expiring within 5 years

Most-cited patents

PatentTitleAreaCited byStatus
US7562198B2 Semiconductor device and semiconductor signal processing apparatus Physics 415 Expired
US6816422B2 Semiconductor memory device having multi-bit testing function Physics 414 Expired
US7173857B2 Nonvolatile semiconductor memory device capable of uniformly inputting/outputting data Physics 409 Expired
US7791962B2 Semiconductor device and semiconductor signal processing apparatus Physics 408 Active
US6864534B2 Semiconductor wafer Electricity 263 Expired
US7709932B2 Semiconductor wafer having a separation portion on a peripheral area Emerging Cross-Sectional Technologies 262 Active
US6703328B2 Semiconductor device manufacturing method Physics 261 Expired
US7115966B2 Semiconductor device Electricity 250 Expired
US6724657B2 Semiconductor device with improved latch arrangement Physics 241 Expired
US6791882B2 Nonvolatile semiconductor memory device Physics 237 Expired
US6801452B2 Clock synchronized non-volatile memory device Physics 235 Expired
US7502249B1 Method and system for using a pulsed field to assist spin transfer induced switching of magnetic memory elements Emerging Cross-Sectional Technologies 224 Active
US7138786B2 Power supply driver circuit Emerging Cross-Sectional Technologies 214 Expired
US6760269B2 Semiconductor memory device capable of generating internal data read timing precisely Physics 212 Expired
US7385380B2 Switching power supply Electricity 205 Active
US7446567B2 Signal transmission apparatus and interconnection structure Electricity 196 Active
US7502275B2 Semiconductor memory device Physics 172 Expired
US6771538B2 Semiconductor integrated circuit and nonvolatile memory element Physics 155 Expired
US7126149B2 Phase change memory and phase change recording medium Electricity 147 Expired
US7379327B2 Current driven switching of magnetic storage cells utilizing spin transfer and magnetic memories using such cells having enhanced read and write margins Physics 143 Active
US7345912B2 Method and system for providing a magnetic memory structure utilizing spin transfer Physics 141 Active
US7208751B2 Non-volatile semiconductor memory device allowing shrinking of memory cell Electricity 141 Expired
US6731535B1 Nonvolatile semiconductor memory device Electricity 131 Expired
US6812574B2 Semiconductor storage device and method of fabricating the same Emerging Cross-Sectional Technologies 130 Expired
US7444168B2 Radio communication semiconductor integrated circuit, data processing semiconductor integrated circuit and portable device Electricity 126 Active

Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.