Super-junction semiconductor device
US6696728B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 15, 2002 |
| Grant date | Feb 24, 2004 |
| Priority date | — |
| Expiry date | Mar 15, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/127
Abstract
To provide a super-junction MOSFET reducing the tradeoff relation between the on-resistance and the breakdown voltage greatly and having a peripheral structure, which facilitates reducing the leakage current in the OFF-state thereof and stabilizing the breakdown voltage thereof. The vertical MOSFET according to the invention includes a drain drift region including a first alternating conductivity type layer; a breakdown withstanding region (peripheral region) including a second alternating conductivity type layer around drain drift region, second alternating conductivity type layer being formed of layer-shaped vertically-extending n-type regions and layer-shaped vertically-extending p-type regions laminated alternately; an n-type region around second alternating conductivity type layer; and a p-type region formed in the surface portion of n-type region to reduce the leakage current in the OFF-state of the MOSFET.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.