Long wavelength laser diodes on metamorphic buffer modified gallium arsenide wafers

US6697412B2 · kind B2 · utility

Assignee

• TriQuint Semiconductor, Inc. · US

Inventors

• Edward A. Beam, III · Dallas, US
• Gary A. Evans · Plano, US
• Paul Saunier · Garland, US
• Ming-Yih Kao · Glendale, US
• David Michael Fanning · Garland, US
• William H. Davenport · Portland, US
• Andy Turudic · Defiance, US
• Walter Wohlmuth · Hillsboro, US

Key dates

• Filing date: Apr 13, 2001
• Grant date: Feb 24, 2004
• Expiry date: May 3, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01S5/3409
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

A light-emitting device includes a GaAs substrate, a light-emitting structure disposed above the substrate and capable of emitting light having a wavelength of about 1.3 microns to about 1.55 microns, and a buffer layer disposed between the substrate and the light-emitting structure. The composition of the buffer layer varies through the buffer layer such that a lattice constant of the buffer layer grades from a lattice constant approximately equal to a lattice constant of the substrate to a lattice constant approximately equal to a lattice constant of the light-emitting structure. The light-emitting device exhibits improved mechanical, electrical, thermal, and optical properties compared to similar light-emitting devices grown on InP substrates.