Tunable vertical-cavity surface-emitting laser with tuning junction
US6697413B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 31, 2001 |
| Grant date | Feb 24, 2004 |
| Priority date | — |
| Expiry date | Jul 31, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3095
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An embodiment of a surface-emitting laser structure includes a first semiconductor region of a first conductivity type coupled to a first contact and a second semiconductor region of the same conductivity type coupled to a second contact. A third semiconductor region of the opposite conductivity type is coupled to a third contact and interposed between the first and second semiconductor regions. An active region is interposed between the first and third regions. In a further embodiment, the laser structure may include a variable refractive index structure interposed between the second and third semiconductor regions. In another embodiment, a surface-emitting laser structure may include an active region between a first semiconductor region of a first conductivity type coupled to a first contact, and a second As semiconductor region of opposite conductivity type coupled to a second contact. A third electrical contact is dielectrically spaced from the second semiconductor region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.