Semiconductor device manufacturing system and the method thereof
US6697771B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 27, 2000 |
| Grant date | Feb 24, 2004 |
| Priority date | — |
| Expiry date | Aug 7, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67276
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The semiconductor device manufacturing system of the present invention comprises: insulating film determination unit for determining whether an insulating film is present on the substrate surface or not; in-insulating-film impurity concentration extraction unit for extracting the concentration of an impurity contained in the insulating film on the substrate surface; diffusion parameter determination unit for determining diffusion parameter values constituting the diffusion equation as a function of the concentration of the impurity contained in the insulating film; and in-substrate impurity profile extraction unit for extracting the impurity profile information in the substrate by solving the diffusion equation in which the diffusion parameter values are introduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.