Method for testing of known good die
US6697978B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 24, 2000 |
| Grant date | Feb 24, 2004 |
| Priority date | — |
| Expiry date | Jun 10, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2029/5006
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Multi-pattern data retention testing and iterative change of measurement testing are used for the production of Known Good Dies. Multi-pattern data testing of a memory such as an SRAM comprises writing at Vdd, reduction of Vdd, restoration of Vdd, reading of the memory, and comparison of write patterns to read patterns to determine accuracy of data retention. Iterative or change of measurement testing involves repeated testing of a die to determine changes in Iddq, changes in multi-pattern data retention, or other changes in chip operating parameters. Defect activating test may be used in combination with change of measurement testing or with multi-pattern data retention testing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.