Composition and method for polishing in metal CMP
US6699299B2 · kind B2 · utility
11Cited by
5References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 20, 2003 |
| Grant date | Mar 2, 2004 |
| Priority date | — |
| Expiry date | Apr 11, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31053
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A composition is provided in the present invention for polishing a composite semiconductor structure containing a metal layer (such as tungsten, aluminum, or copper), a barrier layer (such as tantalum, tantalum nitride, titanium, or titanium nitride), and an insulating layer (such as SiO2). The composition comprises an aqueous medium, an oxidant, an organic polymer that attenuates removal of the oxide film. The composition may optionally comprise a complexing agent and/or a dispersant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.