Method for the formation of resist patterns
US6699645B2 · kind B2 · utility
4Cited by
10References
14Claims
0Family size
Assignee
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Key dates
| Filing date | Mar 5, 1997 |
| Grant date | Mar 2, 2004 |
| Priority date | — |
| Expiry date | Mar 5, 2017 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/322
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Method for the formation of resist patterns by using a chemically amplified resist which comprises an alkali-insoluble base polymer or copolymer and an acid generator, in which the patternwise exposed film of said resist is developed with an organic alkaline developer in the presence of a surface active agent containing a higher alkyl group in a molecule thereof. The resist patterns have no drawback such as cracks and peeling, and thus can be advantageously used in the production of semiconductor devices such as LSIs and VLSIs.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.