Capacitor and memory structure and method
US6699745B1 · kind B1 · utility
23Cited by
4References
2Claims
0Family size
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Key dates
| Filing date | Mar 27, 1998 |
| Grant date | Mar 2, 2004 |
| Priority date | — |
| Expiry date | Mar 27, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/964
Abstract
A rugged polysilicon electrode for a capacitor has high surface area enhancement with a thin layer by high nucleation density plus gas phase doping which also enhances grain shape and oxygen-free dielectric formation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.