Patent · US Expired

Method for increasing the capacitance in a storage trench

US6699747B2 · kind B2 · utility

81Cited by

25References

14Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Alexander Ruff · Dresden, DE
Wilhelm Kegel · Laichingen, DE
Wolfram Karcher · Osterburken, DE
Martin Schrems · Langenbruck, DE

Key dates

Filing date	Nov 18, 2002
Grant date	Mar 2, 2004
Priority date	—
Expiry date	Nov 18, 2022

Classification

Technology area (CPC H)Electricity
CPC primaryH10D1/684
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

In a method for forming a trench capacitor a first layer of silicon oxide is deposited in a storage trench and a layer of silicon is deposited over the first layer by a chemical vapor deposition process. A layer of an oxidizable metal is deposited over the layer of silicon. The layer of silicon and the layer of the oxidizable metal are subsequently oxidized to form a layer of silicon oxide and metal oxide.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.