Method of fabricating a capacitor for semiconductor devices
US6699751B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jul 9, 2002 |
| Grant date | Mar 2, 2004 |
| Priority date | — |
| Expiry date | Jul 9, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/682
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a capacitor in semiconductor devices includes forming an insulating interlayer on a semiconductor substrate; forming a contact hole in the insulating interlayer to expose a portion of the semiconductor substrate; forming a plug in the contact hole to be in contact with the semiconductor substrate; forming an adhesive layer, a first barrier layer and a first lower electrode on the insulating interlayer successively; selectively removing portions of the adhesive layer, the first barrier layer and the first lower electrode to define exposed sides of the adhesive layer, the first barrier layer and the first lower electrode; forming a second barrier layer at sides of the adhesive layer; forming a second lower electrode at the sides of the first and second barrier layers; forming a dielectric layer on the first lower electrode and second lower electrode; and forming an upper electrode on the dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.