Method for depositing a low k dielectric film (K>3.5) for hard mask application
US6699784B2 · kind B2 · utility
28Cited by
47References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 12, 2002 |
| Grant date | Mar 2, 2004 |
| Priority date | — |
| Expiry date | Apr 20, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31138
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for depositing a silicon oxycarbide hard mask on a low k dielectric layer is provided. Substrates containing a silicon oxycarbide hard mask on a low k dielectric layer are also disclosed. The silicon oxycarbide hard mask may be formed by a processing gas comprising a siloxane.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.