GaP-base semiconductor light emitting device
US6700139B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 27, 2002 |
| Grant date | Mar 2, 2004 |
| Priority date | — |
| Expiry date | Aug 27, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/92247
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The main surface on the side of a p-type layer of a GaP-base semiconductor is defined as a first main surface, and the main surface opposite thereto as a second main surface. The second main surface is lapped and then etched using aqua regia to thereby collectively form thereon specular concave curved surfaces which swell inwardly into the semiconductor substrate in order to enhance total reflection of light. On the other hand, the area on the surface of semiconductor substrate excluding that for forming a first contact layer and excluding the second main surface are subjected to anisotropic etching to thereby collectively form outwardly-swelling convex curved surfaces in order to reduce total reflection of light. A second contact layer (second electrode) to be formed on the second main surface is composed of an alloy of Au, Si and Ni, and a first contact layer to be formed on the first main surface is composed of an alloy of Au as combined with either of Be and Zn. This successfully provides a GaP-base semiconductor light emitting device which can ensure a satisfactory level of improvement in the luminance even though the emission mechanism thereof relies upon indirect transition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.