Semiconductor device
US6700141B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 17, 2001 |
| Grant date | Mar 2, 2004 |
| Priority date | — |
| Expiry date | Mar 7, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/111
Abstract
A reliable super-junction semiconductor device is provided that facilitates relaxing the tradeoff relation between the on-resistance and the breakdown voltage and improving the avalanche withstanding capability under an inductive load. The super-junction semiconductor device includes an active region including a thin first alternating conductivity type layer and a heavily doped n+-type intermediate drain layer between first alternating conductivity type layer and an n++-type drain layer, and a breakdown withstanding region including a thick second alternating conductivity type layer. Alternatively, active region includes a first alternating conductivity type layer and a third alternating conductivity type layer between first alternating conductivity type layer and n++-type drain layer, third alternating conductivity type layer being doped more heavily than first alternating conductivity type layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.