Capacitor with high charge storage capacity
US6700145B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 29, 1999 |
| Grant date | Mar 2, 2004 |
| Priority date | — |
| Expiry date | Apr 29, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/682
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A capacitor structure characterized by improved capacitance as a result of increasing the capacitance associated with charge spreading that occurs within the electrodes of the capacitor. The electrodes are formed of superconducting or high-dielectric constant conductor materials, and are preferably used in combination with high-dielectric constant insulator materials. The capacitor structures are particularly suited as thin-film capacitors of the type used for high-density applications such as DRAM.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.