Trench corner protection for trench MOSFET
US6700158B1 · kind B1 · utility
53Cited by
6References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 18, 2000 |
| Grant date | Mar 2, 2004 |
| Priority date | — |
| Expiry date | Aug 18, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/519
Abstract
A method of making a trench MOSFET structure having upper trench corner protection, the method not requiring trench corner rounding or sacrificial oxide/strip steps. The trench MOSFET structure fabricated according to the method of the present invention exhibits higher oxide breakdown voltage and lower gate-to-source capacitance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.