Inventor · West Jordan, UT, US

Dean E. Probst

64Patents
17h-index
64Co-inventors
87Inventor score

Filing activity: Nov 14, 1997 → Sep 19, 2023

Most-cited inventions

PatentTitleAreaCited byStatus
US6429481B1 Field effect transistor and method of its manufacture Electricity 366 Expired
US8143124B2 Methods of making power semiconductor devices with thick bottom oxide layer Emerging Cross-Sectional Technologies 132 Active
US6916745B2 Structure and method for forming a trench MOSFET having self-aligned features Emerging Cross-Sectional Technologies 71 Expired
US7385248B2 Shielded gate field effect transistor with improved inter-poly dielectric Electricity 64 Expired
US7504303B2 Trench-gate field effect transistors and methods of forming the same Electricity 61 Active
US6700158B1 Trench corner protection for trench MOSFET Electricity 53 Expired
US7078296B2 Self-aligned trench MOSFETs and methods for making the same Electricity 53 Expired
US7344943B2 Method for forming a trench MOSFET having self-aligned features Emerging Cross-Sectional Technologies 42 Expired
US6710406B2 Field effect transistor and method of its manufacture Electricity 39 Expired
US6828195B2 Method of manufacturing a trench transistor having a heavy body region Electricity 32 Expired
US7598144B2 Method for forming inter-poly dielectric in shielded gate field effect transistor Electricity 25 Active
US6825510B2 Termination structure incorporating insulator in a trench Electricity 24 Expired
US7416948B2 Trench FET with improved body to gate alignment Electricity 24 Active
US7595524B2 Power device with trenches having wider upper portion than lower portion Emerging Cross-Sectional Technologies 22 Active
US7511339B2 Field effect transistor and method of its manufacture Electricity 18 Expired
US7148111B2 Method of manufacturing a trench transistor having a heavy body region Electricity 17 Expired
US9726897B2 Cube polarizer with minimal optical path length difference Physics 17 Active
US7923776B2 Trench-gate field effect transistor with channel enhancement region and methods of forming the same Electricity 17 Active
US8174067B2 Trench-based power semiconductor devices with increased breakdown voltage characteristics Electricity 16 Active
US8043913B2 Method of forming trench-gate field effect transistors Electricity 13 Active
US9348076B2 Polarizer with variable inter-wire distance Physics 12 Active
US8148749B2 Trench-shielded semiconductor device Electricity 12 Active
US9354374B2 Polarizer with wire pair over rib Physics 11 Active
US8563377B2 Trench-based power semiconductor devices with increased breakdown voltage characteristics Electricity 8 Active
US8193581B2 Trench-based power semiconductor devices with increased breakdown voltage characteristics Electricity 8 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.