Multi-emitter bipolar transistor for bandgap reference circuits

US6700226B2 · kind B2 · utility

Assignee

• STMicroelectronics SA

Inventors

• Loris Vendrame · Ponzano, IT
• Paolo Caprara · Milano, IT
• Giorgio Oddone · Rossiglione, IT
• Antonio Barcella · Albino, IT

Key dates

• Filing date: Dec 27, 2001
• Grant date: Mar 2, 2004
• Expiry date: Feb 14, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/135

Abstract

A transistor includes a substrate region (14) of a first type (P) of conductivity in a semiconductor material layer of the same type (P) of conductivity, at least a first contact region (13) of the first type (P+) of conductivity inside the substrate region (14) and adjacent to a first terminal (C) of the transistor, a well (11) of second type (N) of conductivity placed inside the substrate region (14), wherein the well (11) of second type (N) of conductivity includes at least a second contact region (12) of a second type of conductivity (N+) adjacent to a region of a second terminal (B) of the transistor, and a plurality of third contact regions (10) of the first type of conductivity (P+) adjacent to a plurality of regions of a third terminal (E1, . . . , E3) of the transistor interposed each one (10) and other (12) by proper insulating shapes (20).