Production device for high-quality silicon single crystals
US6702892B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 20, 2001 |
| Grant date | Mar 9, 2004 |
| Priority date | — |
| Expiry date | Feb 22, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1068
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An apparatus is provided which is to be used in producing single crystals for silicon wafers useful as semiconductor materials and which can stably produce large-diameter, long-length and high-quality single crystals from which wafers limited in the number of grown-in defects can be taken. This silicon single crystal production apparatus comprises a cooling member surrounding the single crystal to be pulled up and having an internal surface coaxial with the pulling axis and thermal insulating members disposed outside the outer surface and below the bottom surface of the cooling member, the cooling member having an internal surface diameter of 1.20D to 2.50D (D being the diameter of the single crystal to be pulled up) and a length of not less than 0.25D, the distance from the melt surface to the bottom surface of the cooling member being 0.30D to 0.85D and the bottom side of the thermal insulating member below the cooling member having an inside diameter smaller than the inside diameter of the bottom of the cooling member.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.