Semiconductor device having metallized interconnect structure and method of fabrication
US6703305B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 5, 2002 |
| Grant date | Mar 9, 2004 |
| Priority date | — |
| Expiry date | Jun 5, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76831
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device having a metallized interconnect structure includes a conductor having an upper contact surface and an edge surface depending from the upper contact surface. An opening in an insulating layer overlying the conduct exposes at least a portion of the upper contact surface and at least a portion of edge surface. A liner material covers the edge surface and a portion of the upper contact surface exposed by the opening. An electrically conductive material resides within the opening and is separated from the edge surface by the liner material. A method for fabricating the metallized contact structure includes the deposition and anisotrophic etching of a liner material that is differentially etchable with respect to the insulating layer overlying the conductor. By covering the edge surface of the conductor, a metallized contact structure is provided that can be reliably fabricated using zero-overlap design tolerances.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.