Nguyen Duc Bui
21Patents
10h-index
15Co-inventors
72Inventor score
Filing activity: Dec 1, 1994 → Feb 25, 2019
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6163049A | Method of forming a composite interpoly gate dielectric | Electricity | 84 | Expired |
| US5712510A | Reduced electromigration interconnection line | Electricity | 49 | Expired |
| US6320391A | Interconnection device for low and high current stress electromigration and correlation study | Physics | 36 | Expired |
| US5689139A | Enhanced electromigration lifetime of metal interconnection lines | Electricity | 29 | Expired |
| US5650651A | Plasma damage reduction device for sub-half micron technology | Electricity | 23 | Expired |
| US6472233B1 | MOSFET test structure for capacitance-voltage measurements | Electricity | 20 | Expired |
| US6329831A | Method and apparatus for reliability testing of integrated circuit structures and devices | Physics | 20 | Expired |
| US5726458A | Hot carrier injection test structure and technique for statistical evaluation | Electricity | 14 | Expired |
| US5786705A | Method for evaluating the effect of a barrier layer on electromigration for plug and non-plug interconnect systems | Physics | 13 | Expired |
| US5598009A | Hot carrier injection test structure and testing technique for statistical evaluation | Electricity | 12 | Expired |
| US5966024A | Sensitive method of evaluating process induced damage in MOSFETs using a differential amplifier operational principle | Electricity | 10 | Expired |
| US6700154B1 | EEPROM cell with trench coupling capacitor | Electricity | 9 | Expired |
| US6100101A | Sensitive technique for metal-void detection | Emerging Cross-Sectional Technologies | 7 | Expired |
| US5612627A | Method for evaluating the effect of a barrier layer on electromigration for plug and non-plug interconnect systems | Physics | 5 | Expired |
| US6413820B1 | Method of forming a composite interpoly gate dielectric | Electricity | 5 | Expired |
| US6063662A | Methods for forming a control gate apparatus in non-volatile memory semiconductor devices | Electricity | 5 | Expired |
| US6005409A | Detection of process-induced damage on transistors in real time | Electricity | 5 | Expired |
| US5808361A | Intergrated circuit interconnect via structure having low resistance | Electricity | 4 | Expired |
| US10217521B2 | Multi-time programmable non-volatile memory cell | Electricity | 3 | Active |
| US11295825B2 | Multi-time programmable non-volatile memory cell | Electricity | 1 | Active |
| US6703305B1 | Semiconductor device having metallized interconnect structure and method of fabrication | Electricity | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.