Exposure method, electron beam exposure apparatus and fabrication method of electronic device
US6703630B2 · kind B2 · utility
8Cited by
1References
17Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 10, 2001 |
| Grant date | Mar 9, 2004 |
| Priority date | — |
| Expiry date | Mar 27, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3174
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An exposure method for exposing a wafer having magnetic material by using an electron beam, includes: placing the wafer on a wafer stage; calculating a correction value that corrects a deflection amount by a deflector that deflects the electron beam, based on an irradiation position on the wafer, on which the electron beam is to be incident, and a magnetic field formed by the magnetic material; and deflecting the electron beam based on the correction value to expose the wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.