Thyristor with lightly-doped emitter
US6703646B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 24, 2002 |
| Grant date | Mar 9, 2004 |
| Priority date | — |
| Expiry date | Sep 27, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/201
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A thyristor-based semiconductor device exhibits a relatively increased base-emitter capacitance. According to an example embodiment of the present invention, a base region and an adjacent emitter region of a thyristor are doped such that the emitter region has a lightly-doped portion having a light dopant concentration, relative to the base region. In one embodiment, the thyristor is implemented in a memory circuit, wherein the emitter region is coupled to a reference voltage line and a control port is arranged for capacitively coupling to the thyristor for controlling current flow therein. In another implementation, the thyristor is formed on a buried insulator layer of a silicon-on-insulator (SOI) structure. With these approaches, current flow in the thyristor, e.g., for data storage therein, can be tightly controlled.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.