Image sensor having photodiode on substrate
US6703653B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 30, 2002 |
| Grant date | Mar 9, 2004 |
| Priority date | — |
| Expiry date | Dec 30, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/803
Abstract
The present invention relates to a photodiode of an image sensor. Particularly, the photodiode is formed on a substrate so that an occupying area of a unit pixel of the image sensor is reduced. To achieve this effect, there is provided an image sensor comprising a photodiode receiving light, a floating diffusion area receiving photo-charges generated in the photodiode, a transfer transistor transferring the photo-charges from the photodiode to the floating diffusion area, a reset transistor controlling a voltage of the floating diffusion area, a drive transistor driven by the photodiode and supplying a source voltage and select transistor for addressing, the photodiode including: a first conductive layer formed on a semiconductor substrate and connected to an impurity area in the semiconductor substrate, wherein the semiconductor substrate has a first conductive type, the first conductive layer and the impurity area have a second conductive type; and a second conductive layer formed on the first conductive layer, wherein the second conductive layer has the first conductive type.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.