Processing method and apparatus for removing oxide film
US6706334B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 10, 1999 |
| Grant date | Mar 16, 2004 |
| Priority date | — |
| Expiry date | Nov 10, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67115
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed are a processing method and apparatus for removing a native oxide film from the surface of a subject to be treated. In this method and apparatus, gas generated from N2, H2 and NF3 gases is reacted with the surface of the subject to degenerate the native oxide film into a reactive film. If the subject is heated to a given temperature, the reactive film is sublimated and thus the native oxide film is removed. Plasma is generated from the N2 and H2 gases and then activated to form an activated gas species. The NF3 gas is added to the activated gas species to generate an activated gas of these three gases. In the step of forming the reactive film, the subject is cooled to not higher than a predetermined temperature by a cooling means. In the step of sublimating the reactive film, the subject is lifted up to a predetermined heating position. Also disclosed is a cluster system which includes the treatment apparatus of the present invention and other apparatuses and which is capable of carrying a subject to be treated in an unreactive atmosphere.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.