Method of fabricating circuitized structures
US6706464B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 16, 2003 |
| Grant date | Mar 16, 2004 |
| Priority date | — |
| Expiry date | Jan 16, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24851
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A method for fabricating circuitized substrates which reduces shorts, and does not require baking and resulting film. The method employs a photoimageable dielectric film, having a solvent content less than about 5%, and a glass transition temperature, when cured, which is greater than about 110° C. A photoimageable dielectric film, is provided having from about 95% to about 100% solids, and comprising: from 0% to about 30% of the solids, of a particulate rheology modifier, from about 70% to about 100% of the solids of an epoxy resin system (liquid at 20° C. comprising: from about 85% to about 99.9% epoxy resins; and from about 0.1 to 15 parts of the total resin weight, a cationic photoinitiator; from 0 to about 5% solvent, applying the photoimageable dielectric film to a circuitized substrate; and exposing the film to actinic radiation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.