Thin film inorganic light emitting diode
US6706551B2 · kind B2 · utility
21Cited by
18References
26Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 24, 2002 |
| Grant date | Mar 16, 2004 |
| Priority date | — |
| Expiry date | Jan 24, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K50/805
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A method for the manufacturing of a Thin Film Inorganic Light Emitting Diode is disclosed. The device contains in one single layer or in a double layer a dispersion of zinc sulfide doped with a luminescent centre, and a water-compatible p-type semiconductive polymer, preferably a polythiophene/polymeric polyanion complex.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.