Method for improving thermal process steps

US6706616B1 · kind B1 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Wilhelm Kegel · Laichingen, DE
• Thomas Schuster · Ottenbach, DE

Key dates

• Filing date: Jan 14, 2002
• Grant date: Mar 16, 2004
• Expiry date: Jan 14, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02255
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for controlling temperature of a semiconductor wafer in a process chamber includes heating the chamber from a starting temperature to a stabilizing temperature at a heating rate of approximately 12 degrees Celsius per second and maintaining the chamber at the stabilizing temperature for a selected stabilization period. The chamber is then heated from the stabilizing temperature to a process temperature at a heating rate of approximately 10 degrees Celsius per second. This process temperature is maintained for a selected processing period. After the period, the chamber is cooled to an exit temperature at a selected low cooling rate.