Method for fabricating avalanche trench photodetectors
US6707075B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 10, 2002 |
| Grant date | Mar 16, 2004 |
| Priority date | — |
| Expiry date | Dec 10, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
A method of forming an avalanche trench optical detector device on a semiconductor substrate, comprising forming a first set and a second set of trenches in the substrate, wherein trenches of the first set are alternately disposed with respect to trenches of the second set, filling the trenches with a doped sacrificial material, and annealing the device to form a multiplication region in the substrate. The method comprises etching the doped sacrificial material from the first set of trenches, filling the first set of trenches with a doped material of a first conductivity, etching the doped sacrificial material from a second set of trenches, and filling the second set of trenches with a doped material of a second conductivity. The method further comprises providing separate wiring connections to the first set of trenches and the second set of trenches.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.